These results suggest that dislocations in ZnS become mobile in complete darkness and that multiplied dislocations can affect the optical bandgap over the whole crystal. In addition, the optical bandgap of the deformed ZnS crystals was distinctly decreased after deformation. In contrast, it was found that ZnS crystals can be plastically deformed up to a deformation strain of ε t = 45% in complete darkness.
ZnS crystals immediately fractured when they deformed under light irradiation. Here, we report that extraordinary "plasticity" can take place in an inorganic semiconductor if the deformation is carried out "in complete darkness." Room-temperature deformation tests of zinc sulfide (ZnS) were performed under varying light conditions. Inorganic semiconductors generally tend to fail in a brittle manner.
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